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IRFL4310TR Datasheet(PDF) 2 Page - International Rectifier |
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IRFL4310TR Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFL4310 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250µA DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, ID = 1mA 0.20 W VGS = 10V, ID = 1.6A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.5 S VDS = 50V, ID = 0.80 A 25 µA VDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage 100 nA VGS = 20V Gate-to-Source Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 17 25 ID = 1.6A Qgs Gate-to-Source Charge 2.1 3.1 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge 7.8 12 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 7.8 VDD = 50V tr Rise Time 18 ns ID = 1.6A td(off) Turn-Off Delay Time 34 RG = 6.2 W tf Fall Time 20 RD = 31 W, See Fig. 10 Ciss Input Capacitance 330 VGS = 0V Coss Output Capacitance 92 pF VDS = 25V Crss Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) StaticDrain-to-SourceOn-Resistance IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD £ 1.6A, di/dt £ 340A/µs, VDD £ V(BR)DSS, TJ £ 150°C Notes: VDD = 25V, starting TJ = 25°C, L = 9.2 mH RG = 25W, IAS = 3.2A. (See Figure 12) Pulse width £ 300µs; duty cycle £ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V trr Reverse Recovery Time 72 110 ns TJ = 25°C, IF = 1.6A Qrr Reverse RecoveryCharge 210 320 nC di/dt = 100A/µs 13 0.91 A Source-Drain Ratings and Characteristics |
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Similar Description - IRFL4310TR |
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