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DS1220AD-200 Datasheet(PDF) 7 Page - Dallas Semiconductor |
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DS1220AD-200 Datasheet(HTML) 7 Page - Dallas Semiconductor |
7 / 10 page DS1225AB/AD 7 of 10 POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING (TA : See Note 10) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE at VIH before Power-Down tPD 0 µs 11 VCC slew from VTP to 0V tF 300 µs VCC slew from 0V to VTP tR 300 µs CE at VIH after Power-Up tREC 2 125 ms (TA = 25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 10 years 9 WARNING: Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. |
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