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HBN3101S6R Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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HBN3101S6R Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/6 HBN3101S6R CYStek Product Specification The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 100 mA Collector Current (Pulse) ICP 300 (Note 1) mA Power Dissipation Pd 200 (total) (Note 2) mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1.Single pulse, Pw=10ms 2.150mW per element must not be exceeded. Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 300 - - V IC=100µA BVCEO 300 - - V IC=1mA BVEBO 5 - - V IE=10µA ICBO - - 100 nA IE=0, VCB=300V IEBO - - 100 nA VEB=5V, IC=0 *VCE(sat) - - 300 mV IC=30mA, IB=3mA *VBE(sat) - - 900 mV IC=30mA, IB=3mA *hFE1 100 - 250 - VCE=5V, IC=10mA *hFE2 15 - - - VCE=5V, IC=50mA fT 60 - - MHz VCE=10V, IC=10mA, f=100MHz Cob - - 15 pF VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% |
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