4

Integrated Silicon Solution, Inc. — www.issi.com

Rev.  A

06/28/2011

IS66WV51216DALL

IS66/67WV51216DBLL

  Symbol  Parameter 

Test Conditions 

Min. 

Max. 

Unit

Output HIGH Voltage

2.5-3.6V

2.2

—

V

Output LOW Voltage

2.5-3.6V

—

0.4

V

2.5-3.6V

2.2

V

2.5-3.6V

–0.2

0.6

V

Input Leakage

–1

1

μA

Output Leakage

–1

1

μA

Notes:

  Symbol 

Parameter 

Value 

Unit

Terminal Voltage with Respect to GND

V

Temperature Under Bias

–40 to +85

°C

–0.2 to +3.8

V

Storage Temperature

–65 to +150

°C

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-

ing conditions for extended periods may affect reliability.

  Symbol  Parameter 

Test Conditions 

Min. 

Max. 

Unit

Output HIGH Voltage

1.7-1.95V

1.4

—

V

Output LOW Voltage

1.7-1.95V

—

0.2

V

1.7-1.95V

1.4

V

1.7-1.95V

–0.2

0.4

V

Input Leakage

–1

1

μA

Output Leakage

–1

1

μA

Notes: