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DS1250YP-100-IND Datasheet(PDF) 4 Page - Dallas Semiconductor |
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DS1250YP-100-IND Datasheet(HTML) 4 Page - Dallas Semiconductor |
4 / 11 page DS1250Y/AB 4 of 11 CAPACITANCE (tA=25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 510 pF Input/Output Capacitance CI/O 510 pF AC ELECTRICAL (VCC=5V ±=5% for DS1250AB) CHARACTERISTICS (tA: See Note 10) (VCC=5V ±=10% for DS1250Y) DS1250AB-70 DS1250Y-70 DS1250AB-100 DS1250Y-100 PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES Read Cycle Time tRC 70 100 ns Access Time tACC 70 100 ns OE to Output Valid tOE 35 50 ns CE to Output Valid tCO 70 100 ns OE or CE to Output Active tCOE 5 5 ns 5 Output High Z from Deselection tOD 25 35 ns 5 Output Hold from Address Change tOH 55 ns Write Cycle Time tWC 70 100 ns Write Pulse Width tWP 55 75 ns 3 Address Setup Time tAW 00 ns Write Recovery Time tWR1 tWR2 5 15 5 15 ns ns 12 13 Output High Z from WE tODW 25 35 ns 5 Output Active from WE tOEW 5 5 ns 5 Data Setup Time tDS 30 40 ns 4 Data Hold Time tDH1 tDH2 0 10 0 10 ns ns 12 13 |
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