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IXTQ52P10P Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTQ52P10P
Description  P-Channel Enhancement Mode Avalanche Rated
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTQ52P10P Datasheet(HTML) 5 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 7. Input Admittance
-70
-60
-50
-40
-30
-20
-10
0
-8.0
-7.5
-7.0
-6.5
-6.0
-5.5
-5.0
-4.5
-4.0
-3.5
-3.0
VGS - Volts
TJ = - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-70
-60
-50
-40
-30
-20
-10
0
ID - Amperes
TJ = - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
VSD - Volts
TJ = 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
QG - NanoCoulombs
VDS = - 50V
I D = - 26A
I G = -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40
-35
-30
-25
-20
-15
-10
-5
0
VDS - Volts
f = 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10
100
VDS - Volts
TJ = 150ºC
TC = 25ºC
Single Pulse
25µs
1ms
100µs
RDS(on) Limit @ VGS = -15V
10ms
DC, 100ms
-
-
--
-
-


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