MA4L

Series

5

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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Silicon PIN Limiter Diodes

V17

Notes for Specification and Nominal High Signal Performance Tables:

Maximum Series Resistance

Maximum High Signal Performance

: Test freq.= 9.4GHz, RF pulse width = 1.0µS, Duty Cycle = 0.001%

Measured with a single shunt diode (die) attached directly to the gold plated RF housing ground with 2 mil thick

conductive silver epoxy in a 50Ω, SMA, connectorized test fixture. Chip anode contact is thermo-compression

wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt

coil provides the D.C. return.

Maximum C.W. Incident Power

: Measured in a 50Ω, SMA, connectorized housing @ 4GHz utilizing a TWT

amplifier and the same single diode assembly configuration as stated above.

Die Handling and Mounting Information

Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination from

particulates, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is

strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.

Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0µm. Die can be

mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane

mounting surface must be free of contamination and should have a surface flatness or < ± 2 mils.

• Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold / tin eutectic solder perform is

recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot

gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be

exposed to a temperatures in excess of 320°C for more than 10 seconds.

• Eutectic Die Attachment Using Reflow Oven: Refer to Application Note M538, “Surface Mounting

Instructions”.

• Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied,

approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible

around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive

silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.

Wire Bonding: The chip’s top contact (anode) metallization layer is comprised of Ti/Pt/Au with a final gold

thickness of 1.0µm. Thermo-compression wedge bonding using a .7 or 1 mil diameter gold wire is

recommended. The heat stage temperature should be set to approximately 200°C with a tool tip temperature of

125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary should be adjusted

to the minimum setting required to achieve a good bond. Excessive energy or force applied to the top contact

will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used.

See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” for more detailed

handling and assembly information.