CYStech Electronics Corp.

Spec. No. : C705P8

Issued Date : 2007.08.23

Revised Date :

Page No. : 9/12

CTK24BC01-16P8

CYStek Product Specification

Figure 8. Page Write

Write Operation

Byte/Page Write:

If a write operation is entered (R/W=0) and an acknowledgement is sent, then the next sequence requires an

can be loaded. The device will send an acknowledgement after each byte to confirm the transmission.

To being the write cycle, a STOP condition must be issued ( refer to Figure 7). Both byte and page write

When the STOP condition occurs, an internal time is started, all inputs are disabled, and the EEPROM will

not respond to any more commands until the write cycle is completed.

Note: The number of bytes in a page depends on the density used. If 1K density is used, then the page size

is 8 bytes. In contrast, if the 16K density is used, then the page size is 16 bytes. Refer to the Memory

Organization section for more details.

The internal page counter is incremented after each byte received, but the row location of the memory page

byte in the page is received. Any further data loaded into the page buffer will overwrite the previous data

loaded.

Acknowledge Polling:

After the STOP condition is issued, the write cycle begins. Acknowledge polling can be initiated by

sending a START condition followed by the device address word. If the EEPROM has completed the

internal write cycle and returned to standby mode, the device will respond by sending back an

acknowledgement by pulling the SDA pin low. Otherwise, the sequence will be ignored and no

acknowledgement will be sent.

Read Operations

There are three types of read operations: current address read, random address read, and sequence read. A

random address read can be considered a current address read operation with an additional sequence in the

beginning to load a different address into the internal counter. A sequential read occurs when subsequent

bytes are clocked out after a current address read or random address read occurs.