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FGH40N120AN Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FGH40N120AN Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page 5 www.fairchildsemi.com FGH40N120AN Rev. A2 Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics Figure 15. SOA Characteristics Figure 16. Turn-Off SOA Figure 17. Transient Thermal Impedance of IGBT 20 30 40 50 60 70 80 0.1 1 10 Common Emitter V GE = ±15V, R G = 5Ω T C = 25°C T C = 125°C Eon Eoff Collector Current, I C [A] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 600V 400V Common Emitter R L = 15Ω T C = 25°C Vcc = 200V Gate Charge, Q g [nC] 1 10 100 1000 1 10 100 Safe Operating Area V GE = 15V, T C = 125 oC Collector-Emitter Voltage, V CE [V] 1 10 100 1000 0.01 0.1 1 10 100 2000 1ms 10 ms DC Operation *Notes: 1. TC = 25 o C 2. TJ = 150 o C 3. Single Pulse 10µs 100µs Collector-Emitter Voltage, VCE [V] I C MAX (Pulse) I C MAX (Continuous) 500 1E-5 1E-4 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 1 0.01 0.02 0.05 0.1 0.5 0.2 single pulse Rectangular Pulse Duration [sec] Duty Factor, D = t1/t2 Peak T j = Pdm x Zthjc + TC t1 PDM t2 |
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