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FJV3101RMTF Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FJV3101RMTF Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJV3101R Rev. 1.1.2 2 Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Note: 1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 200 mW Derate Above TA = 25°C 1.60 mW/°C RθJA Thermal Resistance, Junction to Ambient 625 °C/W Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 50 V ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 0.1 μA hFE DC Current Gain VCE = 5 V, IC = 10 mA 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V fT Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA0.5 V VI(on) Input-On Voltage VCE = 0.3 V, IC = 20 mA 3 V R1 Input Resistor 3.2 4.7 6.2 k Ω R1/R2 Resistor Ratio 0.9 1.0 1.1 |
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