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FQB4N80 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQB4N80 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page October 2013 FQB4N80 / FQI4N80 N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω Description ©2007 Fairchild Semiconductor Corporation FQB4N80 / FQI4N80 Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQB4N80TM FQI4N80TU Unit RJC Thermal Resistance, Junction to Case, Max. 0.96 oC/W RJA Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max. 40 GD S I2-PAK G S D D2-PAK G S D • 3.9 A, 800 V, RDS(on) = 3.6 Ω (Max.) @VGS = 10 V, ID = 1.95 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 8.6 pF) • 100% Avalanche Tested Symbol Parameter FQB4N80TM / FQI4N80TU Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 3.9 A - Continuous (TC = 100°C) 2.47 A IDM Drain Current - Pulsed (Note 1) 15.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 460 mJ IAR Avalanche Current (Note 1) 3.9 A EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25°C) * 3.13 W Power Dissipation (TC = 25°C) 130 W - Derate above 25°C 1.04 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C |
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