October 2013

FQB4N80 / FQI4N80

800 V, 3.9 A, 3.6 Ω

Description

©2007 Fairchild Semiconductor Corporation

FQB4N80 / FQI4N80 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

Features

Thermal Characteristics

Symbol

Parameter

FQB4N80TM

FQI4N80TU

Unit

Thermal Resistance, Junction to Case, Max.

0.96

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

62.5

40

GD

S

G

S

D

G

S

D

• Low Gate Charge (Typ. 19 nC)

• Low Crss (Typ. 8.6 pF)

• 100% Avalanche Tested

Symbol

Parameter

FQB4N80TM / FQI4N80TU

Unit

Drain-Source Voltage

800

V

Drain Current

3.9

A

2.47

A

Drain Current

- Pulsed

(Note 1)

15.6

A

Gate-Source Voltage

±

30

V

Single Pulsed Avalanche Energy

(Note 2)

460

mJ

Avalanche Current

(Note 1)

3.9

A

Repetitive Avalanche Energy

(Note 1)

13

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

3.13

W

130

W

- Derate above 25°C

1.04

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C