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DS1230Y-200IND Datasheet(PDF) 3 Page - Dallas Semiconductor |
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DS1230Y-200IND Datasheet(HTML) 3 Page - Dallas Semiconductor |
3 / 12 page DS1230Y/AB 3 of 12 PACKAGES The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM). The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped in separate containers. See the DS9034PC data sheet for further information. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -0.3V to +7.0V Operating Temperature 0°C to 70°C, -40°C to +85°C for IND parts Storage Temperature -40°C to +70°C, -40°C to +85°C for IND parts Soldering Temperature 260°C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (tA: See Note 10) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES DS1230AB Power Supply Voltage VCC 4.75 5.0 5.25 V DS1230Y Power Supply Voltage VCC 4.5 5.0 5.5 V Logic 1 VIH 2.2 VCC V Logic 0 VIL 0.0 0.8 V DC ELECTRICAL (VCC=5V ±=5% for DS1230AB) CHARACTERISTICS (tA: See Note 10) (VCC=5V ±=10% for DS1230Y) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Leakage Current IIL -1.0 +1.0 µA I/O Leakage Current CE ≥ V IH ≤ V CC IIO -1.0 +1.0 µA Output Current @ 2.4V IOH -1.0 mA Output Current @ 0.4V IOL 2.0 mA Standby Current CE =2.2V ICCS1 5.0 10.0 mA Standby Current CE =VCC-0.5V ICCS2 3.0 5.0 mA Operating Current ICCO1 85 mA Write Protection Voltage (DS1230AB) VTP 4.50 4.62 4.75 V Write Protection Voltage (DS1230Y) VTP 4.25 4.37 4.5 V |
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