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2SC2613 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC2613 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2613 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=:,L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 µA ICEO Collector cut-off current VCE=350V; RBE=: 100 µA hFE-1 DC current gain IC=2.5A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 7 Switching times ton Turn-on time 1.0 µs tstg Storage time 1.2 2.5 µs tf Fall time IC=5.0A IB1=- IB2=1A VCC?150V 1.0 µs |
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