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IRFH8334PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH8334PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH8334PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 4.1 RθJC (Top) Junction-to-Case f ––– 37 °C/W RθJA Junction-to-Ambient g ––– 39 RθJA (<10s) Junction-to-Ambient g ––– 26 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 ––– 11.2 13.5 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 44 ––– ––– S Qg Total Gate Charge ––– 15 ––– nC Qg Total Gate Charge ––– 7.1 ––– Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 2.3 ––– Qgodr Gate Charge Overdrive ––– 1.3 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 3.3 ––– Qoss Output Charge ––– 5.7 ––– nC RG Gate Resistance ––– 1.2 ––– Ω td(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 14 ––– td(off) Turn-Off Delay Time ––– 7.0 ––– tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 1180 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 110 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 13 20 ns Qrr Reverse Recovery Charge ––– 19 29 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VGS = 4.5V, ID = 16A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 10V, ID = 20A VDS = 24V, VGS = 0V, TJ = 125°C m Ω ID = 20A ID = 20A TJ = 25°C, IF = 20A, VDD = 15V di/dt = 380 A/µs eà TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 0V VDS = 10V Conditions Max. 35 20 ƒ = 1.0MHz VDS = 24V, VGS = 0V VDS = 16V, VGS = 0V VDD = 30V, VGS = 4.5V VGS = 10V, VDS = 15V, ID = 20A Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A e ––– ––– 100 ––– ––– 25 MOSFET symbol nA ns A pF nC VDS = 15V ––– VGS = 20V VGS = -20V |
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