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| 2SC2954 |
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 NEC
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2 page 
2 2SC2954 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 100 nA DC Current Gain hFE VCE = 10 V, IC = 50 mA *1 30 100 200 Gain Bandwidth Product fT VCE = 10 V, IC = 50 mA 3.0 4.0 GHz Feedback Capacitance Cre VCB = 10 V, Emitter Grounded, f = 1.0 MHz 1.1 1.8 pF Insertion Power Gain S21e2 VCE = 10 V, IC = 50 mA, f = 500 MHz RG = 50 10 12.5 dB Noise Figure NF VCE = 10 V, IC = 30 mA, f = 500 MHz RG = 50 2.4 4.0 dB *1 Pulse Measurement PW 350 s, duty cycle 2 %/Pulsed TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ta-Ambient Temperature- °C 0 1.0 2.0 50 100 150 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VBE-Base to Emitter Voltage-V 0 100 200 0.5 1.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE-Collector to Emitter Voltage-V 0 100 200 2 468 10 DC CURRENT GAIN vs. COLLECTOR CURRENT IC-Collector Current-mA 1 20 30 50 70 100 200 10 10 100 200 Free Air Rth(j-a) 312.5 °C/W Ceramic Substrate 16 cm2 × 0.7 mm Rth(j-a) 62.5 °C/W VCE = 10 V 2 mA 1.5 mA 1 mA IB = 500 A µ 0 VCE = 10 V |
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