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BC556BTA Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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BC556BTA Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. hFE Classification Symbol Parameter Value Unit VCBO Collector-Base Voltage BC556 -80 V BC557 / BC560 -50 BC558 / BC559 -30 VCEO Collector-Emitter Voltage BC556 -65 V BC557 / BC560 -45 BC558 / BC559 -30 VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature Range -65 to +150 °C Symbol Parameter Conditions Min. Typ. Max. Unit ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -15 nA hFE DC Current Gain VCE = -5 V, IC = -2 mA 110 800 VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -90 -300 mV IC = -100 mA, IB = -5 mA -250 -650 VBE(sat) Collector-Base Saturation Voltage IC = -10 mA, IB = -0.5 mA -700 mV IC = -100 mA, IB = -5 mA -900 VBE(on) Base-Emitter On Voltage VCE = -5 V, IC = -2 mA -600 -660 -750 mV VCE = -5 V, IC = -10 mA -800 fT Current Gain Bandwidth Product VCE = -5 V, IC = -10 mA, f = 10 MHz 150 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6 pF NF Noise Figure BC556 / BC557 / BC558 V CE = -5 V, IC = -200 μA, f = 1 kHz, RG = 2 kΩ 210 dB BC559 / BC560 1 4 BC559 VCE = -5 V, IC = -200 μA, RG = 2 kΩ, f = 30 to 15000 MHz 1.2 4.0 BC560 1.2 2.0 Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 |
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