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BZX84-A9V1 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BZX84-A9V1 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page BZX84_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 6 — 6 March 2014 7 of 16 NXP Semiconductors BZX84 series Voltage regulator diodes [1] f = 1 MHz; VR =0V [2] tp = 100 s; square wave; Tj =25 C before surge 24 A 23.76 24.24 60 250 25 70 0.05 16.8 18.4 20.4 22.0 55 1.25 B 23.5 24.5 C 22.8 25.6 Table 8. Characteristics per type; BZX84-A2V4 to BZX84-C24 …continued Tj =25 C unless otherwise specified. BZX84- xxx Sel Working voltage VZ (V) Differential resistance rdif () Reverse current IR (A) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =5 mA IZ =1mA IZ =5mA IZ =5mA Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max Table 9. Characteristics per type; BZX84-A27 to BZX84-C75 Tj =25 C unless otherwise specified. BZX84- xxx Sel Working voltage VZ (V) Differential resistance rdif () Reverse current IR (A) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =2 mA IZ =0.5 mA IZ =2mA IZ =2mA Min Max Typ Max Typ Max Max VR (V) Min Typ Max Max Max 27 A 26.73 27.27 65 300 25 80 0.05 18.9 21.4 23.4 25.3 50 1.0 B 26.5 27.5 C 25.1 28.9 30 A 29.7 30.30 70 300 30 80 0.05 21 24.4 26.6 29.4 50 1.0 B 29.4 30.6 C 28.0 32.0 33 A 32.67 33.33 75 325 35 80 0.05 23.1 27.4 29.7 33.4 45 0.9 B 32.3 33.7 C 31.0 35.0 36 A 35.64 36.36 80 350 35 90 0.05 25.2 30.4 33.0 37.4 45 0.8 B 35.3 36.7 C 34.0 38.0 39 A 38.61 39.39 80 350 40 130 0.05 27.3 33.4 36.4 41.2 45 0.7 B 38.2 39.8 C 37.0 41.0 43 A 42.57 43.43 85 375 45 150 0.05 30.1 37.6 41.2 46.6 40 0.6 B 42.1 43.9 C 40.0 46.0 47 B 46.1 47.9 85 375 50 170 0.05 32.9 42.0 46.1 51.8 40 0.5 C 44.0 50.0 51 A 50.49 51.51 90 400 60 180 0.05 35.7 46.6 51.0 57.2 40 0.4 B 50.0 52.0 C 48.0 54.0 |
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