NSCT2907ALT1G datasheet(3/5 Pages) ONSEMI

Part #	NSCT2907ALT1G

Description	General Purpose Transistors PNP Silicon

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NSCT2907ALT1G

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TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

3.0

0.2

−0.1

TJ = 125°C

25°C

−55 °C

VCE = −1.0 V

VCE = −10 V

2.0

−0.2 −0.3

−0.5 −0.7 −1.0

−2.0 −3.0

−5.0 −7.0 −10

−20

−30

−50 −70 −100

−200 −300 −500

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

−0.4

−0.6

−0.8

−1.0

−0.2

0

IC = −1.0 mA

−0.005

−10 mA

−0.01

−100 mA

−500 mA

−0.02 −0.03 −0.05 −0.07 −0.1

−0.2 −0.3

−0.5 −0.7 −1.0

−2.0

−3.0

−5.0 −7.0 −10

−20 −30

−50

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT

300

−5.0

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

−5.0

200

100

70

50

30

20

10

7.0

5.0

3.0

−7.0 −10

−20 −30

−50 −70 −100

−200 −300 −500

tr

2.0 V

td @ VBE(off) = 0 V

VCC = −30 V

IC/IB = 10

TJ = 25°C

500

300

100

70

50

30

20

10

7.0

5.0

−7.0 −10

−20 −30

−50 −70 −100

−200 −300 −500

200

tf

t′s = ts − 1/8 tf

VCC = −30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

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