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2SC3583 Datasheet(PDF) 1 Page - NEC

Part No. 2SC3583
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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Maker  NEC [NEC]
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DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984
©
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF
1.2 dB TYP.
@f = 1.0 GHz
• Ga
13 dB TYP.
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IE = 0
DC Current Gain
hFE *
50
100
250
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
fT
9
GHz
VCE = 8 V, IC = 20 mA
Feed-Back Capacitance
Cre **
0.35
0.9
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11
13
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
 350 s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R33/Q *
R34/R *
R35/S *
Marking
R33
R34
R35
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
0.65
+0.1
−0.15




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