OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747

FAX: (972) 323-2396 sensors@optekinc.com

Issue A.3

05/08

Page 3 of 4

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Reflective Object Sensor

OPB750N, OPB750T

OPB755NZ, OPB755TZ, OPB755TAZ

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) Derate linearly 1.67 mW/° C above 25° C.

(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and

ketones.

(4) Photocurrent is measured using an Eastman Kodak neutral white test card having 90% diffuse reflectance as a reflecting

surface. Reference: Eastman Kodak, Catalog #E 152 7795.

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode (See OP240 for additional information)

Forward Voltage

-

-

1.8

V

Reverse Current

-

-

100

µA

Output Phototransistor (see OP550 for additional information)

Collector-Emitter Breakdown Voltage

24

-

-

V

Collector Dark Current

-

-

100

nA

Saturation Voltage

-

-

.40

V

Off-State Collector Current

(5)

-

-

250

nA

d = 0.08”, 0.15”, 0.22”

Coupled

On-State Collector Current

(4)

500

375

250

-

-

-

-

-

-

µA

Operating and Storage Temperature Range

OPB750N, OPB750T

OPB755NZ, OPB755TZ, OPB755TAZ

-40° C to + 85° C

-40° C to + 80° C

Lead Soldering Temperature

(1)

260° C

Input Diode

Forward DC Current

50 mA

Reverse DC Voltage

2 V

Power Dissipation

100 mW

Output Phototransistor

Collector-Emitter Voltage

24 V

Collector DC Current

30 V

Power Dissipation

(3)

100 mW

Peak Forward Current (1 µ pulse width, 300 pps)

1 A