VBO40-08NO6

V

=

V

A²s

A²s

A²s

A²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.15

R

1.3 K/W

R

min.

40

V

40

T

= 25°C

VJ

T

=

°C

VJ

mA

1.5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

115

P

tot

95

W

T

= 25°C

C

R

K/W

20

800

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.33

T

= 25°C

VJ

150

V

F0

V

0.81

T

=

°C

VJ

150

12.1

mΩ

V

1.07

T

=

°C

VJ

I =

A

F

V

20

1.31

I =

A

F

40

I =

A

F

40

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

800

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

11

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

150

320

345

365

360

A

A

A

A

270

295

510

495

800

DAV

d =

rectangular

0.5

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

900

0.10

IXYS reserves the right to change limits, conditions and dimensions.

20130517b

Data according to IEC 60747and per semiconductor unless otherwise specified

© 2013 IXYS all rights reserved