FLLD261TA datasheet(2/2 Pages) ETC2

Part #	FLLD261TA

Description	SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR

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SOT23 SILICON PLANAR LOW LEAKAGE

COMMON ANODE DIODE PAIR

ISSUE 2 JANUARY 1996

7

PART MARKING DETAIL D63

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Repetitive Peak Reverse Voltage

VRRM

100

V

Average Rectified Forward Current

IF(AV)

250

mA

Non-Repetitive Peak Forward Current (t=1µs) IFSM

3.0

A

Power Dissipation at Tamb = 25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX.

UNIT CONDITIONS.

Reverse Current

IR

5

nA

µ

A

VRRM=100V

VRRM=100V, Tamb=150°C

Reverse Recovery Time*

trr

400

ns

IF= IR=50 400mA

Forward Recovery Time

tfr

10

ns

IF=10mA

Diode Capacitance

Cd

4pF

VR=1V, f=1MHz

Forward Overshoot Voltage Vfr

Typ

0.9

V

IF=10mA,

Rise time=5ns ±20%

Forward Voltage

VF

1.4

V

IF=-200mA

*Time for IR to recover to 10% of IR peak

SOT23

FLLD263

DIODE PIN CONNECTION

1

23

1

3

2

FLLD258

FLLD261

FLLD263

3 - 98

3 - 99

0100

VF - Forward Voltage (V)

IR v VF

0

25

80

60

40

20

5

10

15

20

TYPICAL CHARACTERISTICS

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