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3

IRF7805PbF

Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage

Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 1. Normalized On-Resistance vs. Temperature

Typical Characteristics

0.1

1

10

0.4

0.5

0.6

0.7

0.8

0.9

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

Fig 4. Typical Source-Drain Diode Forward Voltage

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient