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AFT09S282NR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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AFT09S282NR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 14 page AFT09S282NR3 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD =28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 20.0 35.9 6.3 --38.0 --14 940 MHz 20.1 36.2 6.2 --37.6 --18 960 MHz 20.0 36.1 6.1 --37.5 --17 Features • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. Document Number: AFT09S282N Rev. 0, 10/2012 Freescale Semiconductor Technical Data 720--960 MHz, 80 W AVG., 28 V AFT09S282NR3 Figure 1. Pin Connections (Top View) RFout/VDS 21 RFin/VGS OM--780--2 PLASTIC © Freescale Semiconductor, Inc., 2012. All rights reserved. |
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