AFT09S282NR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 80 watt RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 720 to 960 MHz.

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

920 MHz

20.0

35.9

6.3

--38.0

--14

940 MHz

20.1

36.2

6.2

--37.6

--18

960 MHz

20.0

36.1

6.1

--37.5

--17

Features

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Document Number: AFT09S282N

Rev. 0, 10/2012

Freescale Semiconductor

Technical Data

720--960 MHz, 80 W AVG., 28 V

AFT09S282NR3

Figure 1. Pin Connections

(Top View)

21

OM--780--2

PLASTIC

© Freescale Semiconductor, Inc., 2012. All rights reserved.