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IS31AP4991-GRLS2-TR Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers |
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IS31AP4991-GRLS2-TR Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers |
5 / 11 page IS31AP4991 Integrated Silicon Solution, Inc. – www.issi.com Rev. B, 10/18/2012 5 ABSOLUTE MAXIMUM RATINGS (Note 1) Supply voltage, VCC - 0.3V ~ +6.0V Voltage at any input pin - 0.3V ~ VCC+0.3V Maximum junction temperature, TJMAX 150°C Storage temperature range, TSTG - 65°C ~ +150°C Operating temperature range, TA −40°C ~ +85°C Note 1: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS The following specifications apply for CIN = 0.22μF, RIN = RF = 20kΩ, CBYPASS = 1μF, unless otherwise specified. Limits apply for TA = 25°C. VCC=5V (Note 2 or specified) Symbol Parameter Condition Typ. Limit Unit ICC Quiescent power supply current VCC = 0V, Io = 0A, no Load 4.8 mA (max) ISTBY Standby current VSTBY = GND, RL = ∞ 1 μA(max) VSTBYH Shutdown voltage input high VCC = 5.5V 1.4 V(min) VSTBYL Shutdown voltage input low VCC = 2.7V 0.4 V(max) VOS Output offset voltage 15 mV (max) Po Output power (8Ω) THD+N = 1%; f = 1kHz 1.18 W THD+N = 10%; f = 1kHz 1.46 tWU Wake-up time (Note 3) CBYPASS = 1μF 115 ms THD+N Total harmonic distortion+noise (Note 3) Po = 0.5Wrms; f = 1kHz 0.025 % PSRR Power supply rejection ratio (Note 3) Vripple p-p = 200mV Input Grounded f = 217Hz 65 dB f = 1kHz 77 The following specifications apply for CIN = 0.22μF, RIN = RF = 20kΩ, CBYPASS = 1μF, unless otherwise specified. Limits apply for TA= 25°C. VCC=3V (Note 2 or specified) Symbol Parameter Condition Typ. Limit Unit ICC Quiescent power supply current VCC = 0V, Io = 0A, no Load 3.8 mA(max) ISTBY Standby current VSTBY = GND, RL = ∞ 1 μA(max) Po Output power (8Ω) THD+N = 1%; f = 1kHz 405 mW THD+N = 10%; f = 1kHz 502 tWU Wake-up time (Note 3) CBYPASS = 1μF 102 ms THD+N Total harmonic distortion+noise (Note 3) Po = 0.3Wrms; f = 1kHz 0.027 % Note 2: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other temperature range, are guaranteed by design, characterization and process control. Note 3: Guaranteed by design. |
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