IS31AP4991

Integrated Silicon Solution, Inc. – www.issi.com

Rev. B, 10/18/2012

5

-

0.3V ~ +6.0V

Voltage at any input pin

-

150°C

-

65°C ~ +150°C

−40°C ~ +85°C

Note 1:

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Condition

Typ.

Limit

Unit

Quiescent power supply current

4.8

mA (max)

Standby current

1

μA(max)

Shutdown voltage input high

1.4

V(min)

Shutdown voltage input low

0.4

V(max)

Output offset voltage

15

mV (max)

Po

Output power (8Ω)

THD+N = 1%; f = 1kHz

1.18

W

THD+N = 10%; f = 1kHz

1.46

Wake-up time (Note 3)

115

ms

THD+N

Total harmonic distortion+noise

(Note 3)

Po = 0.5Wrms; f = 1kHz

0.025

%

PSRR

Power supply rejection ratio

(Note 3)

Vripple p-p = 200mV

Input Grounded

f = 217Hz

65

dB

f = 1kHz

77

Symbol

Parameter

Condition

Typ.

Limit

Unit

Quiescent power supply current

3.8

mA(max)

Standby current

1

μA(max)

Po

Output power (8Ω)

THD+N = 1%; f = 1kHz

405

mW

THD+N = 10%; f = 1kHz

502

Wake-up time (Note 3)

102

ms

THD+N

Total harmonic distortion+noise

(Note 3)

Po = 0.3Wrms; f = 1kHz

0.027

%

Note 2:

Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other

temperature range, are guaranteed by design, characterization and process control.

Note 3:

Guaranteed by design.