DT456P datasheet(1/4 Pages) DIODES

Part #	DT456P

Description	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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D

S11614 Rev. C-4

1 of 4

DT456P

P-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

Features

Thermal Characteristics

Maximum Ratings 25°C unless otherwise specified

Notes:

1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

the

solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.

1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.

1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.

1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Note 1a Continuous

Pulsed

ID

±7.5

±20

A

Maximum Power Dissipation

Note 1a

Note 1b

Note 1c

Pd

3.0

1.3

1.1

W

Operating and Storage Temperature Range

Tj,TSTG

-65 to +150

°C

·

High Cell Density DMOS Technology

·

Low On-State Resistance

·

High Power and Current Capability

·

Fast Switching Speed

·

High Transient Tolerance

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

Note 1

RQJA

42

°C/W

Thermal Resistance, Junction-to-Case

RQJC

12

°C/W

D

G

D

S

A

B

C D

G

H

J

K

L

M

N

P

R

S

E

Mechanical Data

·

SOT-223 Plastic Case

·

Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

SOT-223

Dim

Min

Max

A

6.30

6.71

B

2.90

3.10

C

6.71

7.29

D

3.30

3.71

E

2.22

2.35

G

0.92

1.00

H

1.10

1.30

J

1.55

1.80

K

0.025

0.102

L

0.66

0.79

M

4.55

4.70

N

—

10°

P

10°

16°

R

0.254

0.356

S

10°

16°

All Dimensions in mm

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