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MTB06N03I3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTB06N03I3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
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4 / 7 page  CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 4/9 MTB06N03I3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 10 2030 4050 60 Total Gate Charge---Qg(nC) VDS=15V ID=30A Maximum Safe Operating Area 0.1 1 10 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs 10μs RDS(ON) Limit Maximum Drain Current vs Case Temperature 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 TC, Case Temperature(°C) |
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