MTB30N06V8 datasheet(3/9 Pages) CYSTEKEC

Part #	MTB30N06V8

Description	N -Channel Logic Level Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C699V8

Issued Date : 2012.03.20

Revised Date : 2012.03.26

Page No. : 3/9

MTB30N06V8

CYStek Product Specification

Typical Characteristics

Typical Output Characteristics

0

5

10

15

20

25

30

012

34

5

Brekdown Voltage vs Ambient Temperature

50

60

70

80

90

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250μA,

VGS=0V

10V,9V,8V,7V,6V

VDS, Drain-Source Voltage(V)

VGS=4V

VGS=3V

VGS=2V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01

0.1

1

10

100

ID, Drain Current(A)

VGS=2.5V

VGS=4.5V

VGS=3V

VGS=10V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

02

46

8

1

IDR, Reverse Drain Current(A)

0

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

40

80

120

160

200

02

4

6

8

10

Drain-Source On-State Resistance vs Junction Tempearture

0

20

40

60

80

-60

-20

20

60

100

140

180

Tj, Junction Temperature(°C)

VGS=10V, ID=6.8A

VGS, Gate-Source Voltage(V)

ID=6.8A

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MTB30N06V8 Datasheet(PDF) 3 Page - Cystech Electonics Corp.

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