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MTC4506Q8 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTC4506Q8
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC4506Q8 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C780Q8
Issued Date : 2012.05.17
Revised Date :
Page No. : 4/12
MTC4506Q8
CYStek Product Specification
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
0
5
10
15
20
012
345
VDS, Drain-Source Voltage(V)
VGS=3V
10V, 9V, 8V, 7V, 6V, 5V, 4V
VGS=2V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-60
-20
20
60
100
140
180
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=10V
VGS=2.5V
VGS=3V
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02468
1
IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
20
30
40
50
60
70
80
90
100
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-60 -40 -20
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
VGS=10V, ID=5A
RDS(ON)@Tj=25°C : 28mΩ typ.
VGS, Gate-Source Voltage(V)
ID=5A


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