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MTC6601G6 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTC6601G6
Description  P-Channel Enhancement Mode MOSFET
Download  13 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC6601G6 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C813G6
Issued Date : 2012.09.17
Revised Date : 2012.11.21
Page No. : 5/13
MTC6601G6
CYStek Product Specification
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0.1
1
10
100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
-60 -40 -20
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
ID=250μA
Single Pulse Power Rating, Junction to Ambient
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
Pulse Width(s)
TJ(MAX)=150°C
TA=25°C
θJA=110°C/W
Gate Charge Characteristics
0
1
2
3
4
5
01
23
4
56
Qg, Total Gate Charge(nC)
VDS=15V
ID=3A
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100μs
TA=25°C, Tj=150°C,
VGS=10V, RθJA=110°C/W
Single Pulse
RDS(ON)
Limited
Maximum Drain Current vs JunctionTemperature
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=10V, RθJA=110°C/W


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