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MTDP2004S6R Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTDP2004S6R
Description  Dual P-CHANNEL MOSFET
Download  8 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTDP2004S6R Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 4/ 8
MTDP2004S6R
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1
10
100
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
-60 -40 -20
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
ID=-250μA
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
0
5
10
15
20
0.001
0.01
0.1
1
10
100
Pulse Width(s)
TJ(MAX)=150°C
TA=25°C
RθJA=417°C/W
Gate Charge Characteristics
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg, Total Gate Charge(nC)
ID=-250mA
VDS=-15V
VDS=-10V
VDS=-5V
Maximum Safe Operating Area
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100μs
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=417C/W
Single Pulse
Maximum Drain Current vs JunctionTemperature
0
0.1
0.2
0.3
0.4
0.5
0.6
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-4.5V, RθJA=417°C/W


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