 |
 |
|
| 2SC4955 |
|
||||||||||||||
 NEC
|
| ||||||||||||||
|
2 page 
2SC4955 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µAVCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µAVEB = 1 V, IC = 0 DC Current Gain hFE 75 150 VCB = 3 V, IC = 10 mA*1 Gain Bandwidth Product fT 12 GHz VCE = 3 V, IC = 10 mA Feed-back Capacitance Cre 0.4 0.7 pF VCB = 3 V, IE = 0, f = 1 MHz*2 Insertion Gain |S21e|2 7 8.5 dB VCE = 3 V, IC = 10 mA,f = 2.0 GHz Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA,f = 2.0 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank T83 Marking T83 hFE 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - ˚C 50 200 100 0 50 100 150 40 30 20 10 0 0.5 1.0 VCE = 3 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VBE - Base to Emitter Voltage - V 180 mW Free Air |
|
Link URL |
Sponsor of Alldatasheet |
|
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Bookmark | Link Exchange | Manufacturer List All Rights Reserved© Alldatasheet.com 2003 - 2012 |
| Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com | Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl |
