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MTEF1P15L3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTEF1P15L3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C896L3 Issued Date : 2013.04.01 Revised Date : Page No. : 4/8 MTEF1P15L3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) ID=-250μA Maximum Safe Operating Area 0.01 0.1 1 10 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) RDS(ON) Limited DC 10ms 100ms 1ms 100μs 10μs TA=25°C, Tj=150°C, VGS=-10V, RθJA=50°C/W Single Pulse Gate Charge Characteristics 0 2 4 6 8 10 01 23 45 6 Qg, Total Gate Charge(nC) VDS=-75V ID=-1.4A Maximum Drain Current vs Junction Temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 25 50 75 100 125 150 175 Tj, JunctionTemperature(°C) TA=25°C, VGS=-10V, RθJA=50°C/W Typical Transfer Characteristics 0 2 4 6 8 02 4 6 8 10 -VGS, Gate-Source Voltage(V) VDS=-10V |
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