CYStech Electronics Corp.

Spec. No. : C865N3

Issued Date : 2012.08.08

Revised Date :

Page No. : 1/8

MTP3403KN3

CYStek Product Specification

P-Channel Enhancement Mode MOSFET

MTP3403KN3

-30V

-3.3A

63mΩ(typ)

100mΩ(typ)

114mΩ(typ)

Features

• Advanced trench process technology

• High density cell design for ultra low on resistance

• Low gate charge

• Compact and low profile SOT-23 package

• Pb-free & Halogen-free package

Equivalent Circuit

Outline

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-3.3

A

-2.6

A

Pulsed Drain Current

(Note 2)

-15

A

Maximum Power Dissipation

1.25

W

Linear Derating Factor

0.01

W/

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 270

°C/W when mounted on minimum copper pad.

2. Pulse width limited by maximum junction temperature.

MTP3403KN3

SOT-23

D

S

G：Gate

G

S：Source

D：Drain