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MTP4411Q8 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTP4411Q8
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTP4411Q8 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2011.12.07
Page No. : 4/8
MTP4411Q8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.8
1
1.2
1.4
1.6
1.8
2
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
ID=-250μA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
VDS=-5V
Pulsed
TA=25°C
Gate Charge Characteristics
0
2
4
6
8
10
02
4
68
10
12
14
16
Qg, Total Gate Charge(nC)
VDS=-15V
ID=-5.3A
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
-ID, Drain-Source Voltage(V)
Operation in this area
is limited by RDS(ON)
DC
10ms
100ms
1ms
100μs
10μs
Maximum Drain Current vs Junction Temperature
0
1
2
3
4
5
6
7
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V


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