CYStech Electronics Corp.

Spec. No. : C778G6

Issued Date : 2012.02.10

Revised Date : 2012.10.09

Page No. : 2/9

MTS3572G6

CYStek Product Specification

°C)

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

60

-20

V

Gate-Source Voltage

±

20

±

12

V

0.3

-4.3

A

0.24

-3.4

A

0.8

-20

A

Pd

1.14

W

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Rth,ja

110

°C/W

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180

°C/W when mounted on minimum copper pad

2.

Pulse width limited by maximum junction temperature

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

60

-

-

V

1.0

-

2.5

V

-

-

±10

-

-

1

-

-

10

μA

°C

-

1.5

2.5

-

1.9

3

-

3.3

6

Ω

100

240

-

mS

Dynamic

Ciss

-

30.6

-

Coss

-

5.5

-

Crss

-

4

-

pF

-

2.6

-

-

7.1

-

-

8.6

-

-

15

-

ns

*Qg

-

0.7

-

*Qgs

-

0.3

-

*Qgd

-

0.1

-

nC

Source-Drain Diode

-

-

0.3

-

-

0.8

A

-

-

1.2

V

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%