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2SD1666 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1666 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1666 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=: 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.6 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 70 280 hFE-2 DC current gain IC=3A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 60 pF fT Transition frequency IC=0.5A ; VCE=5V 8 MHz hFE-1 Classifications Q R S 70-140 100-200 140-280 |
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