 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 7

Publication Order Number:

BAW56WT1/D

1

BAW56WT1G,

SBAW56WT1G

Dual Switching Diode,

Common Anode

Features

Site and Control Change Requirements

Compliant*

Rating

Symbol

Max

Unit

Reverse Voltage

70

V

Forward Current

200

mA

Peak Forward Surge Current

500

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

(Note 1)

Derate above 25C

200

1.6

mW

mW/C

Thermal Resistance, Junction−to−Ambient

625

C/W

Total Device Dissipation

Derate above 25C

300

2.4

mW

mW/C

Thermal Resistance, Junction−to−Ambient

417

C/W

Junction and Storage Temperature

−55 to

+150

C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

SC−70

CASE 419

STYLE 4

MARKING DIAGRAM

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

Package

ORDERING INFORMATION

BAW56WT1G

SC−70

(Pb−Free)

3,000 / Tape & Reel

ANODE

3

CATHODE

1

2

CATHODE

A1

= Device Code

M

= Date Code*

G

= Pb−Free Package

A1 M G

G

1

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SBAW56WT1G

SC−70

(Pb−Free)

3,000 / Tape & Reel