SIA443DJ datasheet(3/9 Pages) VISHAY

Part #	SIA443DJ

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74474

S-80435-Rev. B, 03-Mar-08

www.vishay.com

3

Vishay Siliconix

SiA443DJ

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 thru 2.5 V

1.5 V

1 V

2 V

0.02

0.04

0.06

0.08

0.10

0.12

0.14

04

8

12

16

20

ID - Drain Current (A)

VGS = 1.8 V

VGS = 4.5 V

VGS = 2.5 V

0

2

4

6

8

0

3

6

9

12

15

Qg - Total Gate Charge (nC)

ID = 6.8 A

VDS = 16 V

VDS = 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

0.0

0.4

0.8

1.2

1.6

2.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

VDS - Drain-to-Source Voltage (V)

0

300

600

900

1200

1500

04

8

12

16

20

Coss

Ciss

TJ - Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

ID = 4.7 A

VGS = 4.5 V, 2.5 V, 1.8 V

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