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2SC5178 Datasheet(PDF) 3 Page - NEC

Part No. 2SC5178
Description  NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC5178
3
CHARACTERISTICS CURVES (TA = 25
°C)
TA – Ambient Temperature – °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
VCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
VBE – Base to Emitter Voltage – V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
200
0
50
100
150
50
40
30
20
10
0
0.5
1.0
25
20
15
10
5
0
1.0
2.0
3.0
A
µ
200
A
µ
180
A
µ
160
A
µ
140
A
µ
120
A
µ
100
A
µ
80
A
µ
60
A
µ
40
A
µ
20
IB =
VCE = 2 V
30 mW
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
IC – Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
2 V
18
16
14
12
10
8
6
4
1
2
5
10
f = 2 GHz
14
12
10
8
6
4
1
2
5
10
f = 2 GHz
VCE = 1 V
2 V
IC – Collector Current – mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 1 V
VCE = 2 V




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