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2SC5178 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5178
Description  NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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SILICON TRANSISTOR
FEATURES
Low current consumption and high gain
|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5178-T1
3000 units/reel
2SC5178-T2
3000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
2SC5178
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published
November 1996 N
Printed in Japan
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
2.8
+0.2
–0.3
1.5
+0.2
–0.1
©
1994
DATA SHEET
©
1994




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