2SC5178 datasheet(2/12 Pages) NEC | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

2 page

2SC5178

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

Collector Cutoff Current

ICBO

100

VCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

100

VEB = 1 V, IC = 0

DC Current Gain

hFE

140

VCE = 2 V, IC = 7 mA*1

Insertion Power Gain (1)

|S21e|2

9.5

11.5

VCE = 2 V, IC = 7 mA, f = 2 GHz

Insertion Power Gain (2)

|S21e|2

7.5

10.5

VCE = 1 V, IC = 5 mA, f = 2 GHz

Noise Figure (1)

1.5

2.0

VCE = 2 V, IC = 3 mA, f = 2 GHz

Noise Figure (2)

1.5

2.0

VCE = 1 V, IC = 3 mA, f = 2 GHz

Gain Bandwidth Product (1)

10.5

13.5

GHz

VCE = 2 V, IC = 7 mA, f = 2 GHz

Gain Bandwidth Product (2)

8.5

GHz

VCE = 1 V, IC = 5 mA, f = 2 GHz

Feedback Capacitance

Cre

0.3

0.5

VCB = 2 V, IE = 0 mA, f = 1 MHz*2

*1.

Measured with pulses: Pulse width

≤ 350

µs, duty cycle ≤ 2 %, pulsed

*2.

Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal

of the bridge.

hFE Class

Class

Marking

T84

hFE

70 to 140

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