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DCR1279SD44 Datasheet(PDF) 8 Page - Dynex Semiconductor |
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DCR1279SD44 Datasheet(HTML) 8 Page - Dynex Semiconductor |
8 / 9 page DCR1279SD 8/9 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 deep (One each side) Ø76 max Ø48 nom Ø48 nom Ø2.8 Cathode tab Cathode Anode Gate Nominal weight: 500g Clamping force: 22kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: D ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Gate triggering and the use of gate characteristics AN4840 Recommendations for clamping power semiconductors AN4839 The effect of temperature on thyristor performance AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V TO , r T on-state characteristic AN5001 |
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