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DCR1478SY Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR1478SY Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 8 page 6/8 www.dynexsemi.com DCR1478SY Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% V RSM at T case = 125˚C) Fig.4 Stored charge Fig.5 Gate characteristics 10 1 0.1 0.01 0.001 Gate trigger current, IGT - (A) 100 10 1 0.1 100W 50W 20W 10W 5W 2W Upper limit 99% VFGM Lower limit 1% Pulse width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Pulse frequency Hz Table gives pulse power PGM in Watts 10 1 0.1 0.01 0.001 Time - (s) 0.1 0.01 0.001 0.0001 Double side cooled Anode side cooled 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Anode side 0.019 0.020 0.0207 0.0234 0.1 1.0 10 100 Rate of decay of on-state current, dI/dt - (A/µs) 100000 10000 1000 IT = 1400A Conditions: QS is total integral stored charge Tj = 125˚C IRM QS tp IT dI/dt 40 30 20 10 0 110 1 2 3 45 50 ms Cycles at 50Hz Duration 1.0 1.5 I2t I2t = Î2 x t 2 2.0 50 10 20 30 2.5 |
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