6/8

www.dynexsemi.com

DCR1478SY

Fig.6 Transient thermal impedance - junction to case

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RSM

at T

case

= 125˚C)

Fig.4 Stored charge

Fig.5 Gate characteristics

10

1

0.1

0.01

0.001

100

10

1

0.1

100W

50W

20W

10W

5W

2W

Upper

limit

99%

Lower

limit

1%

Pulse width

µs

100

200

500

1ms

10ms

50

150

150

150

150

20

100

150

150

150

100

-

400

150

125

100

25

-

Pulse frequency Hz

10

1

0.1

0.01

0.001

Time - (s)

0.1

0.01

0.001

0.0001

Double side cooled

Anode side cooled

100

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0095

0.0105

0.0112

0.0139

Anode side

0.019

0.020

0.0207

0.0234

0.1

1.0

10

100

Rate of decay of on-state current, dI/dt - (A/µs)

100000

10000

1000

Conditions:

dI/dt

40

30

20

10

0

110

1

2 3 45

50

ms

Cycles at 50Hz

Duration

1.0

1.5

2

2.0

50

10

20 30

2.5