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DCR1476SY36 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DCR1476SY36 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page 3/8 www.dynexsemi.com DCR1476SY SURGE RATINGS Conditions 10ms half sine; T case = 125 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 125 oC V R = 0 Max. Units Symbol Parameter I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing 6.57 x 10 6 A 2s 36.25 kA 4.21 x 106 A2s 29.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.019 Anode dc Clamping force 43.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.002 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN –55 125 oC - On-state (conducting) - 135 oC - 0.004 oC/W oC/W Cathode dc - 0.019 oC/W Double side cooled - 0.0095 oC/W |
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