STF45N65M5 datasheet(3/20 Pages) STMICROELECTRONICS

Part #	STF45N65M5

Description	N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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DocID022854 Rev 4

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STB45N65M5, STF45N65M5, STP45N65M5

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK

TO-220

TO-220FP

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

35

35 (1)

1.

Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC = 100 °C

22

22 (1)

A

IDM

(1)

Drain current (pulsed)

140

140 (1)

A

PTOT

Total dissipation at TC = 25 °C

210

40

W

dv/dt (2)

2.

ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope

15

V/ns

dv/dt (3)

3.

VDS ≤ 480 V

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220FP

TO-220

Rthj-case

Thermal resistance junction-case max

0.60

3.13

0.60

°C/W

Rthj-pcb

(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-pcb max

30

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

9A

EAS

Single pulse avalanche energy (starting tj=25°C,

Id= IAR; Vdd=50)

810

mJ

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