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DF65435 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DF65435 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page DF654 4/7 Fig.3 Recovered charge 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 1000 100 10000 100000 A: I F = 2000A B: I F = 1000A C: I F = 500A D: I F = 200A E: I F = 100A A B C D E I RR QS t p = 1ms I F dI R/dt Q S = ∫ Conditions: T j = 150 ˚C, V R = 100 V 50 µs 0 Fig.2 Maximum (limit) forward characteristics 0 100 200 300 400 500 1.0 1.25 1.5 1.75 2.0 Instantaneous forward voltage V F - (V) Measured under pulse conditions T j = 150˚C T j = 25˚C |
Similar Part No. - DF65435 |
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Similar Description - DF65435 |
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