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DF45210 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DF45210 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page DF452 4/7 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 100 10 1000 10000 I RR QS t p = 1ms I F dI R/dt Q S = ∫ Conditions: T j = 125˚C, V R = 100V 50 µs 0 I F = 2000A I F = 1000A I F = 500A I F = 200A I F = 100A Fig.4 Recovered charge 0 100 200 300 400 500 0.95 1.05 1.15 1.25 1.35 1.45 Instantaneous forward voltage V F - (V) Measured under pulse conditions T j = 150˚C T j = 25˚C Fig.2 Maximum (limit) forward characteristics |
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Similar Description - DF45210 |
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