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DF65430 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DF65430 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 7 page DF654 5/7 Fig.4 Typical reverse recovery current 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 100 10 1000 10000 Conditions: T j = 150˚C, V R = 100V A: I F = 2000A B: I F = 1000A C: I F = 500A D: I F = 200A E: I F = 100A A B D E C Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 0.100 0.010 0.001 0.01 0.1 1 10 100 Time - (s) d.c. Double side cooled |
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Similar Description - DF65430 |
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