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DF75435 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DF75435 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 9 page DF754 6/9 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 1000 100 10000 100000 Conditions: T j = 150˚C, V R = 100V A: I F = 2000A B: I F = 1000A C: I F = 500A D: I F = 200A E: I F = 100A A B C D E I RR QS t p = 1ms I F dI R/dt Q S = ∫ 50 µs 0 1 10 100 1000 Rate of rise of reverse current dI R/dt - (A/µs) 100 10 1000 10000 0.5x I RR I RR Q S t p = 1ms I F dI R/dt t R 50 µs Conditions: T j = 150˚C, V R = 100V A: I F = 2000A B: I F = 1000A C: I F = 500A D: I F = 200A E: I F = 100A A B D E C Fig.4 Recovered charge Fig.5 Typical reverse recovery current vs rate of rise of reverse current |
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